Advances in Crystal Growth Research
[font=Tahoma][size=9pt]B[/size][/font][font=Tahoma][size=9pt]y K. SATO[/size][/font][font=宋体][size=9pt]；[/size][/font][font=Tahoma][size=9pt]Y. FURUKAWA [/size][/font][font=宋体][size=9pt]；[/size][/font][font=Tahoma][size=9pt]K. NAKAJIMA[/size][/font][align=left][font=Tahoma][size=10.5pt]Publisher: [/size][/font][font=Tahoma][size=9pt]Elsevier Science B.V.[/size][/font][/align][align=left][font=Tahoma][size=9pt]ISBN: 0 444 50747 7[/size][/font][/align][align=left][font=Tahoma][size=10.5pt]Publication Date: [/size][/font][font=Tahoma][size=9pt]2001-07-29[/size][/font][font=Tahoma][size=9pt][/size][/font][/align][align=left][font=Tahoma][size=10.5pt]Binding: Hardcover
[/size][/font][/align][align=left][b][font=Tahoma][size=10.5pt]Product Description:[/size][/font][/b][b][size=10pt][/size][/b][/align][align=left][size=10.5pt][font=Times New Roman]The aim of this book is to provide a timely collection that highlights advances in current research of crystalgrowth ranging from fundamental aspects to current applications involving a wide range of materials.[/font][/size][/align][align=left][font=Times New Roman][size=10.5pt]This school is always associated with the International Conference of Crystal Growth (ICCG) series that havebeen held every three years since 1973; thus this school continues the tradition of the past 10 schools of crystalgrowth. In 2001, ICCG- 13lICVGE-11 (the [/size][size=11pt]1 [/size][size=10.5pt]lth International Conference of Vapor Growth and Epitaxy) is heldat Doshisha University in Kyoto right after ISSCG-11.[/size][/font][/align][align=left][size=10.5pt][font=Times New Roman]Eleven chapters of Part 2 deal with crystal growth in the areas of bulk, thin film, and quantum dots[/font][/size][/align][align=left][size=10.5pt][font=Times New Roman]for semiconductors, optoelectronics, magnetics, and optics. The growth of bulk crystals from the melt isdiscussed in Chapters 9 and 10 with emphasis on experiments and simulations. Growth features of thin film and quantum-dot sized crystals of various semiconducting, optoelectronic, and magnetic materials are elaborated in subsequent chapters; in particular, nitride thin film growth that has greatly advanced in recent years is described in Chapters 11-13. Characterization of epitaxial layers with X-ray scattering from crystal surfaces is discussed in Chapter 18. Chapter 19 describes growth features of optical crystals that have a transparent range from the [/font][/size][size=10.5pt][font=Times New Roman]near-ultraviolet to the infrared region.[/font][/size][/align][align=left][size=10.5pt][font=Times New Roman]In Part 3, basic mechanisms of crystal growth from solution are described. Dynamics at crystal-liquid interfaces as revealed by X-ray diffraction and atomic force microscopy are discussed in Chapters 20 and 21, respectively. Chapters 22 and 23 describe the control of crystal morphology and heterogeneous nucleation of organic crystals that is performed by putting specific additives into the growth media.[/font][/size][/align][align=left][size=12pt][font=Times New Roman][/font][/size][/align]
[align=left][font=Times New Roman][b][size=15pt]Contents[/size][/b][size=10pt][/size][/font][/align][font=Tahoma][size=10.5pt]Preface [/size][/font]
[font=Tahoma][size=10.5pt]Acknowledgements [/size][/font]
[font=Tahoma][size=10.5pt]Chapter 1 Crystal growth - Its significance for modem science and technology
Chapter 2 Fundamentals of phase field theory
Chapter 3 Generic mechanism of heterogeneous nucleation and molecular interfacial
Chapter 4 Challenges in crystal growth science and the microgravity tool [/size][/font]
[font=Tahoma][size=10.5pt]Chapter 5 Surface step dynamics: basic concepts, theory and simulation
Chapter 7 Elementary growth process in semiconductor epitaxy - Molecular beam epitaxy
Chapter 8 Atomistic simulation of epitaxial growth processes
Chapter 9 Si bulk crystal growth: what and how?
Chapter 10 Optimization of melt growth processes by experimental analysis and comChapter 11 Epitaxial lateral overgrowth of GaN
Chapter 12 Effects of buffer layer and advanced technology on heteroepitaxy of GaChapter 13 Self-assembled quantum dots systems: the case of GaN
Chapter 14 Self-organised growth of silicon nanocrystals in nanocrystalline-Si/Si02 superlattices
Chapter 15 Growth and characterization of semiconductor silicon carbide for electronic and optoelectronic applications: An industrial perspective
Chapter 16 Crystal growth of SiC II. Epitaxial growth
Chapter 17 Crystal growth and characterization of magnetic semiconductors
Chapter 18 X-ray characterization of epitaxial layers
Chapter 19 Principles and applications of optical crystals; their stoichiometry study Chapter 20 Surface X-ray diffraction studies of crystal growth
Chapter 21 Using atomic force microscopy to investigate solution crystal growth
Chapter 22 Crystal morphology control with tailor-made additives; A tereochemical aChapter 23 Crystal engineering of biological soft materials
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